1 #ifndef MACRO_G4TTLEIC_C
2 #define MACRO_G4TTLEIC_C
16 double Rmax,
double tSilicon,
double xoffset=0);
18 double Rmax,
double tSilicon);
20 double radius,
double halflength,
double tSilicon,
double zOffset);
22 double radius,
double halflength,
double tSilicon,
double zOffset);
24 double radius,
double halflength,
double tSilicon,
double zOffset);
37 double positionToVtx[3][3] = { {-169., -172., -309.5}, {80., 114.7, 0. }, { 287., 289., 340.} };
38 double minExtension[3][3] = { {8, 8, 15.3}, {218, 180, 0 }, {11.62, 11.7, 13.8 } };
39 double maxExtension[3][3] = { {61., 61. , 200}, {-40, 0, 0 }, {170., 170., 250 } };
91 cout <<
"TTL setup infront of ECals with 2 layers fwd/bwd & 1 layer barrel" << endl;
94 cout <<
"TTL setup infront of ECals with 2 layers fwd/bwd & 1 layer barrel, lower barrel layer" << endl;
101 cout <<
"TTL setup infront of ECals with 1 layers fwd/bwd & 1 layer barrel, lower barrel layer" << endl;
116 cout <<
"TTL setup infront of ECals with 2 layers fwd/bwd & 1 layer barrel, 1 layer before HCals everywhere" << endl;
125 cout <<
"TTL setup using LYSO in central barrel" << endl;
129 cout <<
"TTL one forward disk in front of dRICH and one backward disk in front of EEMC, barrel CTTL center at radius 64cm" << endl;
149 cout <<
"TTL forward disk 1 in front of dRICH" << endl;
153 cout <<
"additional two small TTL disks in front of FEMC" << endl;
170 cout <<
"TTL setup infront of ECals with 2 layers fwd/bwd & 1 layer barrel, 1 layer before HCals everywhere choosen!" << endl;
171 cout <<
"conflicting in forward region with DR calo, reducing by 1 layer!" << endl;
174 cout <<
"TTL setup infront of ECals with 2 layers fwd/bwd & 1 layer barrel, 1 layer before HCals everywhere choosen!" << endl;
175 cout <<
"conflicting in forward region with DR calo, reducing adding larger cutout!" << endl;
184 const double mm = .1 *
cm;
185 const double um = 1
e-3 *
mm;
202 const double mm = .1 *
cm;
203 const double um = 1
e-3 *
mm;
218 const double mm = .1 *
cm;
219 const double um = 1
e-3 *
mm;
236 double zpos,
double rMin,
double rMax,
240 cout <<
"r min: " << rMin <<
"\t r max: " << rMax <<
"\t z: " << zpos << endl;
243 double polar_angle = 0;
272 tSilicon / sqrt(12.),
284 tSilicon / sqrt(12.),
295 double zpos,
double rmin,
double rmax,
303 double etamin = -TMath::Log(TMath::Tan(rmin/TMath::Abs(zpos)/2));
304 double etamax = -TMath::Log(TMath::Tan(rmax/TMath::Abs(zpos)/2));
306 double polar_angle = 0;
313 if (etamax < etamin){
335 const double mm = .1 *
cm;
336 const double um = 1
e-3 *
mm;
356 tSilicon / sqrt(12.),
368 tSilicon / sqrt(12.),
378 double radius,
double halflength,
double tSilicon,
double zOffset )
382 cout <<
"The improved barrel TTL layer is placed at a fixed radius of rMin = 80 * cm and is meant to only be used with the BECAL!" << endl;
402 tSilicon / sqrt(12.),
415 tSilicon / sqrt(12.),
431 double radius,
double halflength,
double tSilicon,
double zOffset){
436 const int nSubLayer = 7;
438 string layerName[nSubLayer] = {
"SiliconSensor",
"Metalconnection",
"HDI",
"Cooling",
439 "Support1",
"Support_Gap",
"Support2"};
440 string material[nSubLayer] = {
"G4_Si",
"G4_Al",
"G4_KAPTON",
"G4_WATER",
441 "G4_GRAPHITE",
"G4_AIR",
"G4_GRAPHITE"};
443 50 *
um, 1, 50 * um};
445 double max_bh_radius = 0.;
449 double currRadius =
radius;
451 for (
int l = 0; l < nSubLayer; l++) {
466 currRadius = currRadius+thickness[l];
475 tSilicon / sqrt(12.),
488 tSilicon / sqrt(12.),
501 double radius,
double halflength,
double tSilicon,
double zOffset){
506 const int nSubLayer = 4;
508 string layerName[nSubLayer] = {
"Cooling",
"Crystal",
"SiliconSensor",
"Motherboard"};
509 string material[nSubLayer] = {
"G4_Al",
"LSO",
"G4_Si",
"FR4"};
510 double thickness[nSubLayer] = {0.031 *
cm, 0.029 *
cm, tSilicon, 0.033 *
cm};
512 double max_bh_radius = 0.;
516 double currRadius =
radius;
518 for (
int l = 0; l < nSubLayer; l++) {
533 currRadius = currRadius+thickness[l];
541 resLGAD_barrel = 35
e-1;